Model

BrandSAMSUNG

Series983 DCT

ModelMZ-1LB1T9NE

Details

Form FactorM.2 22110

Capacity1.9TB

Memory ComponentsV-NAND 3-bit MLC

InterfacePCIe Gen 3.0 x4, NVMe 1.2b

ControllerSamsung Phoenix Controller

CacheSamsung 3GB Low Power DDR4 SDRAM

Performance

Max Sequential ReadUp to 3000 MBps

Max Sequential WriteUp to 1430 MBps

4KB Random ReadUp to 480,000 IOPS

4KB Random WriteUp to 42,000 IOPS

MTBF2,000,000 hours

Features

FeaturesU.2 Form Factor and Non-Volatile Memory Express (NVMe)

Advanced ECC Engine and End-to-End Data Protection

Power-Loss Protection

V-NAND Technology

Sustained Performance

High Quality of Service (QoS)

S.M.A.R.T.

Dynamic Thermal Guard Protection

Environmental

Power Consumption (Idle)Max. 2.6W

Power Consumption (Active)Read/Write: 7.6W/8.0W

Operating Temperature0°C ~ +70°C

Max Shock Resistance1,500G & 0.5 ms (Half sine)